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| APT50M60L2VR 500V 77A 0.060W POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. TO-264 Max * TO-264 MAX Package * Faster Switching * Lower Leakage MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter * 100% Avalanche Tested G D S All Ratings: TC = 25C unless otherwise specified. APT50M60 UNIT Volts Amps Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy AL IC HN EC ON TI ED AT NC RM VA FO AD IN 500 77 308 30 40 825 5.0 -55 to 150 300 77 50 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 3200 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 500 77 0.060 25 250 2 4 100 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA EUROPE 405 S.W. Columbia Street Chemin de Magret Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 050-5986 rev- 11-2000 DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT50M60L2VR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = 0.5 ID[Cont.] @ 25C VGS = 15V MIN TYP MAX UNIT 12000 1600 610 500 80 20 25 80 8 nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current Pulsed Source Current 1 Diode Forward Voltage Reverse Recovery Time (IS = -ID[Cont.], dl S /dt = 100A/s) AL IC HN EC ON TI ED AT NC RM VA FO AD IN 210 VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) (Body Diode) 2 ns MAX UNIT Amps Volts ns C 77 308 1.3 (VGS = 0V, IS = -ID[Cont.]) 680 Reverse Recovery Charge (IS = -ID[Cont.], dl S /dt = 100A/s) 17.0 THERMAL CHARACTERISTICS Symbol RqJC RqJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 0.15 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 1.08mH, R = 25W, Peak I = 77A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. TO-264 MAXTM(L2) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 5.79 (.228) 6.20 (.244) Drain 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 050-5986 rev- 11-2000 Gate Drain Source 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 |
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